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this is information on a product in full production. december 2012 doc id 023762 rev 2 1/18 18 STD9NM40N, stp9nm40n n-channel 400 v, 0.73 typ., 5.6 a mdmesh? ii power mosfet in dpak and to-220 packages datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v dss @t jmax r ds(on) max. i d STD9NM40N 450 v < 0.79 5.6 a stp9nm40n dpak 1 3 tab to-220 1 2 3 tab !-v $4!" ' 3 table 1. device summary order codes marking packages packaging STD9NM40N 9nm40n dpak tape and reel stp9nm40n to-220 tube www.st.com
contents STD9NM40N, stp9nm40n 2/18 doc id 023762 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STD9NM40N, stp9nm40n electrical ratings doc id 023762 rev 2 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 400 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 5.6 a i d drain current (continuous) at t c = 100 c 4.3 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 22.4 p tot total dissipation at t c = 25 c 60 w dv/dt (2) 2. i sd 5.6 a, di/dt 400 a/s, v peak < v (br)dss , v ds = 80% v (br)dss peak diode recovery voltage slope 40 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak to-220 r thj-case thermal resistance junction-case max 2.08 c/w r thj-pcb thermal resistance junction-pcb max 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 2a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 140 mj
electrical characteristics STD9NM40N, stp9nm40n 4/18 doc id 023762 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 400 v i dss zero gate voltage drain current (v gs = 0) v ds = 400 v v ds = 400 v, t c = 125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 2.5 a 0.73 0.79 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 365 30 2.3 - pf pf pf c oss(eq) (1) 1. coss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance time related v ds = 0 to 50 v, v gs = 0 - 147.5 - pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 5.4 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 320 v, i d = 5.6 a, v gs = 10 v (see figure 17 ) - 14 3 7 - nc nc nc
STD9NM40N, stp9nm40n electrical characteristics doc id 023762 rev 2 5/18 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 200 v, i d = 5.6 a, r g = 4.7 , v gs = 10 v (see figure 16 ) - 7 4.4 25 8.8 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 5.6 22.4 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5.6 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5.6 a, di/dt = 100 a/s v dd = 60 v (see figure 21 ) - 187 1.3 14 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5.6 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 21 ) - 224 1.5 13 ns c a
electrical characteristics STD9NM40N, stp9nm40n 6/18 doc id 023762 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak figure 3. thermal impedance for dpak i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am16 3 0 3 v1 figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am15517v1 figure 6. output characteristics figure 7. transfer characteristics i d 6 4 2 0 0 4 v d s (v) 8 (a) 2 6 10 8 10 5v 6v v g s =10v 12 14 16 1 8 am16 3 04v1 i d 6 4 2 0 0 4 v g s (v) 8 (a) 2 6 8 10 v d s =20v am16 3 05v1
STD9NM40N, stp9nm40n electrical characteristics doc id 023762 rev 2 7/18 figure 8. static drain-source on-resistance figure 9. gate charge vs gate-source voltage figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature r d s (on) 0.07 3 0.072 0.071 0.070 0 2 i d (a) ( ) 1 3 0.074 0.075 0.076 0.077 v g s =10v 4 5 am00 8 91v1 v g s 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd = 3 20v i d =5.6a 10 12 150 100 50 0 200 250 v d s v d s (v) 3 00 12 14 am16 3 06v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am16 3 0 8 v1 e o ss 0.6 0.4 0.2 0 0 100 v d s (v) ( j) 3 50 0. 8 200 3 00 1.0 1.2 1.4 1.6 250 150 50 am16 3 09v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 75 25 50 100 i d = 250 a am0792 3 v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 i d = 2.5 a am07924v1
electrical characteristics STD9NM40N, stp9nm40n 8/18 doc id 023762 rev 2 figure 14. normalized v ds vs temperature figure 15. source-drain diode forward characteristics v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1 v s d 0 2 i s d (a) (v) 1 5 3 4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-50c t j =150c t j =25c 1.1 1.2 1. 3 am16 3 10v1
STD9NM40N, stp9nm40n test circuits doc id 023762 rev 2 9/18 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STD9NM40N, stp9nm40n 10/18 doc id 023762 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STD9NM40N, stp9nm40n package mechanical data doc id 023762 rev 2 11/18 table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data STD9NM40N, stp9nm40n 12/18 doc id 023762 rev 2 figure 22. dpak (to-252) drawing figure 23. dpak footprint (a) a. all dimensions are in millimeters 006 8 772_i 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
STD9NM40N, stp9nm40n package mechanical data doc id 023762 rev 2 13/18 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data STD9NM40N, stp9nm40n 14/18 doc id 023762 rev 2 figure 24. to-220 type a drawing 00159 88 _typea_rev_ s
STD9NM40N, stp9nm40n packaging mechanical data doc id 023762 rev 2 15/18 5 packaging mechanical data table 11. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packaging mechanical data STD9NM40N, stp9nm40n 16/18 doc id 023762 rev 2 figure 25. tape for dpak (to-252) figure 26. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us t a pe s lot in core for t a pe s t a rt g me asu red at h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t am0 88 51v1
STD9NM40N, stp9nm40n revision history doc id 023762 rev 2 17/18 6 revision history table 12. document revision history date revision changes 08-oct-2012 1 first release. 14-dec-2012 2 ? minor text changes ? added: to-220 package
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